Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 27, Issue 3, Pages 1784-1788Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.3116590
Keywords
aluminium compounds; annealing; atomic force microscopy; etching; gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; light emitting diodes; photoluminescence; p-n junctions; scanning electron microscopy; semiconductor quantum wells; X-ray diffraction; zinc compounds
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Details of the fabrication and characterization of hybrid green light emitting diodes, composed of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN on AlN/sapphire, are reported. Scanning electron microscope, atomic force microscopy, high resolution x-ray diffraction, and photoluminescence were used to study the hybrid device. The effects of solvents, annealing, and etching on n-ZnO are discussed. Successful hybridization of ZnO and (In)GaN into a green light emitting diode was realized.
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