Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 27, Issue 3, Pages 1195-1199Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.3130165
Keywords
atomic force microscopy; electron diffraction; interface roughness; molecular beam epitaxial growth; nanofabrication; production; Rutherford backscattering; silicon; strontium compounds; transmission electron microscopy; X-ray diffraction
Ask authors/readers for more resources
The authors report on the development of a molecular beam epitaxy production process for the epitaxial growth of high quality, single crystal, single phase SrTiO3 (STO) films on Si substrates with diameter up to 8 in. Reflection high-energy electron diffraction indicated that the STO growths proceeded two dimensionally with excellent stoichiometric control, as confirmed by Rutherford backscattering spectroscopy measurement. Excellent crystalline quality has been confirmed by x-ray diffraction rocking curves of the STO (200) reflection with narrow full width at half maximum of 0.06 degrees for a 1200 A thin film. Atomic force microscopy images show smooth, defect-free STO surface with a root-mean-square roughness value as low as similar to 0.6 A. Cross-sectional transmission electron microscope images reveal an abrupt interface between STO and Si, with a very thin SiO2 interfacial layer.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available