Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate

Published 2008 View Full Article

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Title
Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate
Authors
Keywords
-
Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 26, Issue 4, Pages 1560
Publisher
American Vacuum Society
Online
2008-08-22
DOI
10.1116/1.2943667

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