Optimization of electrical characteristics of gadolinium (Gd[sub 2]O[sub 3]) incorporated HfO[sub 2] GaAs n-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer

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Title
Optimization of electrical characteristics of gadolinium (Gd[sub 2]O[sub 3]) incorporated HfO[sub 2] GaAs n-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer
Authors
Keywords
-
Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 26, Issue 2, Pages 624
Publisher
American Vacuum Society
Online
2008-04-18
DOI
10.1116/1.2890708

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