Interface states mediated reverse leakage through metal/AlxGa1−xN∕GaN Schottky diodes

Published 2008 View Full Article

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Title
Interface states mediated reverse leakage through metal/AlxGa1−xN∕GaN Schottky diodes
Authors
Keywords
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Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 26, Issue 6, Pages 1987-1992
Publisher
American Vacuum Society
Online
2008-12-16
DOI
10.1116/1.3002393
References
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