4.5 Article

Growth and mechanical properties of 111-oriented V0.5Mo0.5Nx/Al2O3(0001) thin films

Journal

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 36, Issue 5, Pages -

Publisher

A V S AMER INST PHYSICS
DOI: 10.1116/1.5045048

Keywords

-

Funding

  1. Knut and Alice Wallenberg Foundation [KAW 2011-0094]
  2. Swedish Research Council [VR 2014-5790]
  3. Swedish Government Strategic Research Area Grant in Materials Science (SFO Mat-LiU) on advanced functional materials

Ask authors/readers for more resources

Pseudobinary V0.5Mo0.5Nx(111) alloys with the Bl-NaCl crystal structure are grown on Al2O3(0001) substrates in an ultra-high-vacuum system by reactive magnetron sputter deposition in mixed Ar/N-2 atmospheres at temperatures T-s between 100 and 900 degrees C. Nitrogen-to-metal, N/(V + Mo), fractions x vary monotonically from 0.9 +/- 0.1 with T-s = 100 degrees C to 0.4 +/- 0.1 at T-s = 900 degrees C. Nitrogen loss at higher growth temperatures leads to a corresponding decrease in the relaxed lattice parameter a(o) from 4.21 +/- 0.01 angstrom at T-s = 300 degrees C to 4.125 +/- 0.005 angstrom with T-s = 900 degrees C. Scanning electron micrographs of cube-corner nanoindents extending into the substrate show that the films are relatively ductile, exhibiting material pile-up (plastic flow) around the indent edges. Nanoindentation hardnesses H and elastic moduli E, obtained using a calibrated Berkovich tip, of V0.5Mo0.5Nx(111) layers increase with increasing T-s(decreasing x) from 15 +/- 1 and 198 +/- 5 GPa at 100 degrees C to 23 +/- 2 and 381 +/- 11 GPa at 900 degrees C. These values are lower than the corresponding results obtained for the 001-oriented V0.5Mo0.5Nx films In addition, film wear resistance increases with increasing T-s, while the coefficient of friction, under 1000 mu N loads, is 0.09 +/- 0.01 for all layers. Published by the AVS.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

Article Materials Science, Coatings & Films

Conformal chemical vapor deposition of boron-rich boron carbide thin films from triethylboron

Arun Haridas Choolakkal, Hans Hogberg, Jens Birch, Henrik Pedersen

Summary: We demonstrate the conformal chemical vapor deposition of boron carbide thin films using triethylboron as a single source precursor on silicon substrates with 8:1 aspect-ratio morphologies. The films deposited at temperatures below 450°C exhibit excellent step coverage, attributed to the low reaction probability at lower temperatures. The boron carbide films are determined to have B-B, B-C, C-B, and C-C chemical bonds and show a boron-rich composition of approximately B5C.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2023)

Article Materials Science, Coatings & Films

Determining role of W+ ions in the densification of TiAlWN thin films grown by hybrid HiPIMS/DCMS technique with no external heating

Xiao Li, Ivan Petrov, Lars Hultman, Grzegorz Greczynski

Summary: Hybrid high-power impulse and dc magnetron co-sputtering (HiPIMS/DCMS) with synchronized substrate bias can reduce energy consumption and enable coatings on temperature-sensitive substrates. Direct evidence shows that W+ ion irradiation plays a crucial role in the densification of Ti0.31Al0.60W0.09N films.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2023)

Article Materials Science, Multidisciplinary

Effects of stoichiometry and individual layer thickness ratio on the quality of epitaxial CrBx/TiBy superlattice thin films

Samira Dorri, Jens Birch, Fredrik Eriksson, Justinas Palisaitis, Per O. A. Persson, Babak Bakhit, Lars Hultman, Naureen Ghafoor

Summary: In this study, CrBx/TiBy (0001) diboride superlattices were grown epitaxially on Al2O3 substrates using direct-current magnetron sputter epitaxy. The effects of period and B/TM ratio on the structural quality were investigated. It was found that increasing the relative thickness of TiBy improved the superlattice quality but excessive TiBy led to structural distortion. On the other hand, increasing the relative thickness of CrBx enhanced the superlattice quality and hindered the formation of B-rich boundaries. The hardness values of the superlattices ranged from 29-34 GPa.

MATERIALS & DESIGN (2023)

Article Materials Science, Multidisciplinary

Synthesis and characterization of 11B4C containing Ni/Ti multilayers using combined neutron and X-ray reflectometry

Sjoerd Broekhuijsen, Naureen Ghafoor, Alexei Vorobiev, Jens Birch, Fredrik Eriksson

Summary: This study shows that the interface width of Ni/Ti multilayers can be improved by incorporating low-neutron-absorbing 11B4C and applying a modulated ion-assistance scheme. The accumulated roughness is eliminated in the 11B4C-containing multilayers, resulting in a mean interface width of 4.5 angstrom and an increase in reflectivity at the first Bragg peak by a factor of 2.3 and 1.5 for neutron and X-ray measurements, respectively.

OPTICAL MATERIALS EXPRESS (2023)

Article Materials Science, Multidisciplinary

Morphology control in Ni/Ti multilayer neutron mirrors by ion-assisted interface engineering and B4C incorporation

Fredrik Eriksson, Naureen Ghafoor, Sjoerd Broekhuijsen, Grzegorz Greczynski, Norbert Schell, Jens Birch

Summary: By modulating ion assistance, the interface width of Ni/Ti broad band neutron multilayer supermirrors can be reduced, leading to improved optical contrast and minimum layer thickness.

OPTICAL MATERIALS EXPRESS (2023)

Article Materials Science, Multidisciplinary

Phase separation paths in metastable Zr1-xAlxN monolithic layers compared to multilayers with TiN: Growth versus annealing temperatures

Naureen Ghafoor, Samira Dorri, Justinas Palisaitis, Lina Rogstrom, Babak Bakhit, Grzegorz Greczynski, Lars Hultman, Jens Birch

Summary: Metastable super-saturated Zr1_xAlxN alloys tend to phase separate into the equilibrium cubic (c) ZrN and wurtzite (w) AlN. Different transformation paths were observed depending on the deposition method and post-deposition annealing. The surface segregation effects and secondary phase transformations were studied using in situ high-energy synchrotron wide-angle X-ray scattering and analytical transmission electron microscopy. The results showed the formation of AlN-ZrN labyrinthine structure and the inhibition of c-AlN formation during transformation.

MATERIALIA (2023)

Article Physics, Applied

Towards lowering energy consumption during magnetron sputtering: Benefits of high-mass metal ion irradiation

G. Greczynski, L. Hultman, I. Petrov

Summary: The quest for reducing energy consumption during thin film growth is important for sustainable development goals. Metal ion irradiation has been shown to be effective in densifying films grown without external heating. This Perspective provides an overview of the novel film growth method and discusses the role of metal ion mass, energy, momentum, and concentration.

JOURNAL OF APPLIED PHYSICS (2023)

Article Physics, Applied

Growth and stability of epitaxial zirconium diboride thin films on silicon (111) substrate

Sanjay Nayak, Sathish Kumar Shanmugham, Ivan Petrov, Johanna Rosen, Per Eklund, Jens Birch, Arnaud le Febvrier

Summary: The epitaxial growth of boron rich hexagonal zirconium diborides (h-ZrB2+delta) thin films on Si(111) substrates using the magnetron co-sputtering technique with elemental zirconium and boron is reported. The effect of process temperature (700-900 degrees C) on the compositions and epitaxy quality was investigated. The experimental results showed that an epitaxial thin film of h-ZrB2+delta can be grown on Si(111) substrate using a magnetron co-sputtering technique at a relatively low processing temperature (700 degrees C) and has the potential to be used as a template for III-nitride growth on Si substrates.

JOURNAL OF APPLIED PHYSICS (2023)

Article Materials Science, Coatings & Films

High-mass metal ion irradiation enables growth of high-entropy sublattice nitride thin films from elemental targets

Vladyslav Rogoz, Oleksandr Pshyk, Bartosz Wicher, Justinas Palisaitis, Jun Lu, Daniel Primetzhofer, Ivan Petrov, Lars Hultman, Grzegorz Greczynski

Summary: The traditional method for synthesizing high-entropy sublattice nitride (HESN) coatings is expensive and inflexible. This study demonstrates a new approach to grow HESN films using rotating substrates and elemental targets arranged in a multicathode configuration, which reduces costs and achieves compositional uniformity.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2023)

Article Materials Science, Coatings & Films

Phase composition of polycrystalline HfNx (0.45 ≤ x ≤ 1.60) and effects of low-energy ion irradiation on microstructure, texture, and physical properties

Hwan-Seok Seo, Taeyoon Lee, Hyungjun Kim, Ivan Petrov, J. E. Greene

Summary: We investigated the phase composition of HfNx and the effects of low-energy ion irradiation on the microstructure of polycrystalline layers. The results show that the phases in the layers change with increasing x, and the properties of the layers are influenced by ion irradiation.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2023)

Article Materials Science, Coatings & Films

Low temperature epitaxial growth of Cantor-nitride thin films by magnetic field assisted magnetron sputtering

Smita G. Rao, Pascal Manuel Illgner, Robert Boyd, Gyula Nagy, Philippe Djemia, Daniel Primetzhofer, Ivan Petrov, Arnaud le Febvrier, Per Eklund

Summary: Low-temperature epitaxial growth of multicomponent alloy-based thin films is a challenging task in materials science, which is crucial for understanding the fundamental properties of these complex materials. In this study, Cantor nitride (CrMnFeCoNi)N thin films were epitaxially grown on MgO(100) substrates at low deposition temperature using magnetic-field-assisted dc-magnetron sputtering. The epitaxial growth was observed as the ion flux was increased.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2023)

Article Materials Science, Multidisciplinary

HiPIMS-grown AlN buffer for threading dislocation reduction in DC-magnetron sputtered GaN epifilm on sapphire substrate

Jui-che Chang, Eric Nestor Tseng, Yi-ling Lo, Sanjay Nayak, Daniel Lundin, Per O. A. Persson, Ray-hua Horng, Lars Hultman, Jens Birch, Ching-lien Hsiao

Summary: By using a high-quality AlN buffer layer, the threading dislocation density of sputtered GaN films can be reduced, leading to an improvement in the crystal quality of GaN.

VACUUM (2023)

Article Multidisciplinary Sciences

Toward an increased reliability of chemical bonding assignment in insulating samples by x-ray photoelectron spectroscopy

Grzegorz Greczynski, Oleksandr Pshyk, Lars Hultman

Summary: X-ray photoelectron spectroscopy (XPS) spectra of solid samples are usually referenced to the spectrometer Fermi level (FL). However, for insulating samples, this method is not feasible. By depositing insulating amorphous alumina films on conducting substrates, it is found that the alumina energy levels align with the vacuum level, providing a solution to the binding energy reference problem for reliable assessment of chemical bonding.

SCIENCE ADVANCES (2023)

No Data Available