Zn-doped CuAlS2 transparent p-type conductive thin films deposited by pulsed plasma deposition

CuAl(0.90)Zn(0.10)S(2) thin films were deposited by pulsed plasma deposition. The dependence of structural, surface morphology, electrical, and optical properties of the films on substrate temperature was investigated. X-ray diffraction patterns reveal that the film be amorphous structure. The electrical properties are sensitive to the substrate temperature. A typical sample with conductivity of 50.9 S cm(-1), carrier mobility of 3.13 cm(2) V(-1) s(-1), carrier concentration of 1.41 x 10(19) cm(-3), and average transmission of 74% in visible range of 400-700 nm was obtained. A transparent p-CuAlS(2):Zn/n-In(2)O(3):W heterogeneous diode was also fabricated and exhibits rectifying current-voltage characteristics. The ratio of forward current to the reverse current exceeds 80 within the range of applied voltages of -3.0-+3.0 V and the turn-on voltage is approximately 0.5-0.8 V. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3244565]