High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structures

Electrical self-oscillation is reported for a Ti/NbOx negative differential resistance device incorporated in a simple electric circuit configuration. Measurements confirm stable operation of the oscillator at source voltages as low as 1.06 V, and demonstrate frequency control in the range from 2.5 to 20.5MHz for voltage changes as small as similar to 1V. Device operation is reported for >6.5 x 10(10) cycles, during which the operating frequency and peak-to-peak device current decreased by similar to 25%. The low operating voltage, large frequency range, and high endurance of these devices makes them particularly interesting for applications such as neuromorphic computing. (C) 2015 AIP Publishing LLC.