Influence of compositionally induced defects on the vibrational properties of device grade Cu2ZnSnSe4 absorbers for kesterite based solar cells
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Title
Influence of compositionally induced defects on the vibrational properties of device grade Cu2ZnSnSe4 absorbers for kesterite based solar cells
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 7, Pages 073903
Publisher
AIP Publishing
Online
2015-02-18
DOI
10.1063/1.4913262
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- ZnSe Etching of Zn-Rich Cu2ZnSnSe4: An Oxidation Route for Improved Solar-Cell Efficiency
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- Crystal Structures of Photovoltaic Chalcogenides, an Intricate Puzzle to Solve: the Cases of CIGSe and CZTS Materials
- (2012) Alain Lafond et al. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE
- Detection of a ZnSe secondary phase in coevaporated Cu2ZnSnSe4 thin films
- (2011) Alex Redinger et al. APPLIED PHYSICS LETTERS
- Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies
- (2011) L. G. Cançado et al. NANO LETTERS
- Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4
- (2010) Shiyou Chen et al. APPLIED PHYSICS LETTERS
- Electronic structure and lattice dynamics in kesterite-typeCu2ZnSnSe4from first-principles calculations
- (2010) Narjes Beigom Mortazavi Amiri et al. PHYSICAL REVIEW B
- Intrinsic point defects and complexes in the quaternary kesterite semiconductorCu2ZnSnS4
- (2010) Shiyou Chen et al. PHYSICAL REVIEW B
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