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Title
A reconfigurable gate architecture for Si/SiGe quantum dots
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 22, Pages 223507
Publisher
AIP Publishing
Online
2015-06-06
DOI
10.1063/1.4922249
References
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- (2012) C. H. Yang et al. PHYSICAL REVIEW B
- Quantum Information Storage for over 180 s Using Donor Spins in a 28Si "Semiconductor Vacuum"
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- Fast sensing of double-dot charge arrangement and spin state with a radio-frequency sensor quantum dot
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- Charge Sensing and Controllable Tunnel Coupling in a Si/SiGe Double Quantum Dot
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- (2008) M. Stopa et al. NANO LETTERS
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