Journal
JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS
Volume 93, Issue -, Pages 582-589Publisher
ELSEVIER
DOI: 10.1016/j.jtice.2018.09.003
Keywords
Photoelectrochemical; Bismuth vanadate; Phosphor doping; Dip-coating
Categories
Funding
- National Natural Science Foundation of China [21477050, 21522603, 21671083]
- Natural Science Foundation of Jiangsu Province [BK20151348]
- Henry Fok Education Foundation [141068]
- Six Talents Peak Project in Jiangsu Province [XCL-025]
- Chinese-German Cooperation Research Project [GZ1091]
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The application of bismuth vanadate for photoelectrochemical water splitting is limited by the insufficient charge separation and transport characteristics. In this work, phosphorus doped BiVO4 (P-BiVO4) photoanodes were fabricated through dip-coating method and subsequent thermal treatment process. The optimized 2% P-BiVO4 exhibited a photocurrent density up to 0.28 mA/cm(2) at 1.23 V versus reversible hydrogen electrode in 0.5 M Na2SO4 electrolyte (AM 1.5 G, 100 mW/cm(2)). The incident photon-to-current efficiency of 2% P-BiVO4 was boosted to 33%, which was significantly higher than the pristine BiVO4 photoanode. The X-ray photoelectron spectra indicate that the P-BiVO4 possessed abundant oxygen vacancies, which can account for enhancing PEC performance of P-BiVO4. The electrochemical impedance spectroscopy and Mott-Schottky results further show that P-BiVO4 possess less interface obstruction and high carrier concentration, which were beneficial for the improvement of photoelectrochemical performance. This work provides a useful guidance for the design of non-metal doped BiVO4 photoanodes for energy conversion. (C) 2018 Published by Elsevier B.V. on behalf of Taiwan Institute of Chemical Engineers.
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