Instability dependent upon bias and temperature stress in amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors

Published 2009 View Full Article

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Title
Instability dependent upon bias and temperature stress in amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors
Authors
Keywords
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Journal
Journal of the Society for Information Display
Volume 18, Issue 1, Pages 108
Publisher
Wiley
Online
2009-12-23
DOI
10.1889/jsid18.1.108
References
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