Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector

Interface effect on structural and optical properties of type II InAs/GaSb superlattices

(2014) Jianliang Huang et al.   JOURNAL OF CRYSTAL GROWTH

Benefits and limitations of unipolar barriers in infrared photodetectors

(2013) G.R. Savich et al.   INFRARED PHYSICS & TECHNOLOGY

Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity

(2012) Yanhua Zhang et al.   APPLIED PHYSICS LETTERS

“N” structure for type-II superlattice photodetectors

(2012) Omer Salihoglu et al.   APPLIED PHYSICS LETTERS

Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices

(2012) A. M. Hoang et al.   APPLIED PHYSICS LETTERS

High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice

(2012) Nutan Gautam et al.   APPLIED PHYSICS LETTERS

High Structural Quality of Type II InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection by Interface Control

(2012) Yang Wei et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2–3 $\mu{\rm m}$

(2012) Jianliang Huang et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices

(2012) Nutan Gautam et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiO$_{x}$N$_{y}$ Passivation

(2012) Jianliang Huang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices

(2011) S. Abdollahi Pour et al.   APPLIED PHYSICS LETTERS

Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors With InSb-Like and Mixed Interfaces

(2011) Yanhua Zhang et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

(2010) N. Gautam et al.   APPLIED PHYSICS LETTERS

A high-performance long wavelength superlattice complementary barrier infrared detector

(2009) David Z.-Y. Ting et al.   APPLIED PHYSICS LETTERS

InAs/GaSb superlattices for advanced infrared focal plane arrays

(2009) Robert Rehm et al.   INFRARED PHYSICS & TECHNOLOGY

The effect of doping the M-barrier in very long-wave type-II InAs∕GaSb heterodiodes

(2008) Darin Hoffman et al.   APPLIED PHYSICS LETTERS

Midinfrared type-II InAs∕GaSb superlattice photodiodes toward room temperature operation

(2008) Jian V. Li et al.   APPLIED PHYSICS LETTERS

Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes

(2008) Binh-Minh Nguyen et al.   APPLIED PHYSICS LETTERS