Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4922729
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Funding
- National Science Foundation [ECCS-1351424]
- U.S. Army [W911NF-10-2-0098, 15-215456-03-00]
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Bi2Se3 is a well-known room temperature topological insulator with a gapless surface state and similar to 300 meV bulk band-gap, and as such has never been proposed to possess light-emitting properties. Here, we report prominent light emission in the visible region via photoluminescence (PL) measurements of chemical vapor deposition grown Bi2Se3 nanoplates with an average thickness and effective diameter of tens of nanometers. When excited using 488 nm (2.54 eV) laser light, these nanoscale Bi2Se3 platelets show a strong photoluminescence response in the E-ph similar to 2.1-2.3 eV region, with significant enhancement of light emission compared to bulk level emission. After annealing samples at 200 degrees C for 4 h, PL intensity increased by a factor of 2.4 to 3 for nanoscale Bi2Se3. (C) 2015 AIP Publishing LLC.
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