4.6 Article

Absorption enhancement through Fabry-Perot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell

Journal

APPLIED PHYSICS LETTERS
Volume 106, Issue 8, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4913469

Keywords

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Funding

  1. Incorporated Administrative Agency New Energy and Industrial Technology Development Organization (NEDO)
  2. Ministry of Economy, Trade and Industry (METI), Japan
  3. Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan
  4. Japan Society for the Promotion of Science (JSPS)
  5. French ANR project 3D-BROM
  6. French ANR project NATHISOL
  7. French ANR project ULTRACIS-M
  8. French RENATECH network
  9. Grants-in-Aid for Scientific Research [26630107] Funding Source: KAKEN

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We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells. (C) 2015 AIP Publishing LLC.

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