New insight into the 1.1-eV trap level in CdTe-based semiconductor

Published 2013 View Full Article

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Title
New insight into the 1.1-eV trap level in CdTe-based semiconductor
Authors
Keywords
CdTe, CdZnTe, CdMnTe, X-ray and gamma-ray detector, 1.1-eV defect, I-DLTS
Journal
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 62, Issue 4, Pages 623-627
Publisher
Korean Physical Society
Online
2013-03-04
DOI
10.3938/jkps.62.623

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