Journal
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 59, Issue 3, Pages L2183-L2186Publisher
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.59.2183
Keywords
Quantum dot; Light-emitting diode; Electroluminescence
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Funding
- Korea Research Foundation
- Korean Government [KRF-2008-357-D00159]
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We have demonstrated green emitting silicon quantum dot (QD) light-emitting diodes (LEDs) using a transparent n-type InGaN doping layer. The current-voltage characteristics have been significantly improved. The intensity of the integrated green electroluminescence has also been increased by 2.54 times compared to that of a reference LED. The enhanced electrical properties and the strong green EL of the QD LED with an InGaN layer are attributed to the excellent carrier injection into the QDs via the transparent InGaN doping layer.
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