Low-temperature Solution-processed Zinc-tin-oxide Thin-film Transistor and Its Stability

The effect of the annealing temperature of a solution-processed zinc-tin-oxide (ZTO) thin-film transistor (TFT) was investigated. The active channel thickness was controlled to optimize the thin-film transistor's properties. The characterization of ZTO TFT improved with increasing annealing temperature. Good TFT properties were obtained at a relatively low thermal annealing temperature around 400 degrees C without post-annealing. A solution-processed ZTO TFT shows a high mobility of 2.4 cm(2)/V s, an on-off ratio over 10(5), a threshold voltage of 1.2 V, and a subthreshold slope of 0.7 V/dec. The hysteresis behavior and the bias stability were also characterized.