Article
Engineering, Electrical & Electronic
Tianyuan Song, Dongli Zhang, Mingxiang Wang
Summary: The study demonstrates that annealing at 400 degrees C in O-2 atmosphere can effectively reduce trap states in the a-IGZO channel, improving the stability of TFTs.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Bo Yu, Carlos A. Favela, Sicong Sun, Sahil Sharma, Chuanze Zhang, Tanguy Terlier, Jinghong Chen, Venkat Selvamanickam
Summary: This article presents the performance of flexible high-temperature polycrystalline silicon thin-film transistors fabricated on metal foils, demonstrating high saturation mobility and mechanical robustness after bending cycles. Technologycomputer-aided design simulations reveal the impact of parasitic resistance and defect density on device performance under different doping temperatures.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Yining Yu, Nannan Lv, Dongli Zhang, Yiran Wei, Mingxiang Wang
Summary: The letter discusses how the carrier mobility of amorphous InGaZnO thin-film transistors was enhanced by introducing nitrogen and forming Zn3N2, with a saturation field-effect mobility of 61.6 cm(2)/Vs. However, annealing at 400 degrees C led to a decrease in mobility to 4.1 cm(2)/Vs due to the formation of defective ZnxNy. Additionally, the enhanced mobility of a-IGZO TFTs did not exhibit persistent photoconductivity behavior, making them suitable for functional circuits in active-matrix displays.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Hui Yang, Weiguang Yang, Jinbao Su, Xiqing Zhang
Summary: The research investigated the optical properties of amorphous Phosphorus-doped Indium-Zinc-Tin-Oxide (aIZTO:P) thin films and their potential as the channel layer for thin film transistors (TFTs). Results showed promising electrical performance and stability of a-IZTO:P TFT, demonstrating its suitability for practical applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Ji Ye Lee, Sang Yeol Lee
Summary: Amorphous oxide-based thin-film transistors (TFTs) have been successfully fabricated and analyzed, showing increased electrical mobility and stability. By inserting a-SIZO conductive semiconductor layer into a bilayer TFT, an improved field effect mobility has been achieved. The study achieved a mobility higher than 160 cm(2)/V center dot s with a Vth shift of 1.19 V for an amorphous-based semiconducting multilayer TFT under negative bias temperature stress (NBTS).
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Md Mehedi Hasan, Samiran Roy, Eisuke Tokumitsu, Hye-Yong Chu, Sung Chul Kim, Jin Jang
Summary: By employing one-step annealing, we successfully induced ferroelectricity in spray coated ZrO2 with sputtered amorphous InGaZnO (a-IGZO) capping layer, achieving a large memory window of 1.5 V, high I-ON/I-OFF ratio of 1 x 10(7), and steep subthreshold swing (SS) of 0.12 V/decade. The low thermal expansion coefficient of a-IGZO helped induce the polar orthorhombic phase in the underlying ZrO2 layer by providing suitable mechanical stress. This work provides a new approach for inducing ferroelectricity in ZrO2 for high performance ferroelectric thin film transistors.
APPLIED SURFACE SCIENCE
(2023)
Article
Multidisciplinary Sciences
Daniel Lordan, Guannan Wei, Paul McCloskey, Cian O'Mathuna, Ansar Masood
Summary: This study focused on uncovering the origin of PMA in amorphous thin films deposited by magnetron sputtering, revealing that the change in the nature of anisotropy is related to the growth mechanism of the films and can be avoided by carefully selecting a deposition pressure regime. The emergence of PMA in amorphous thin films was found to be associated with the columnar growth of the films, which was previously not reported as a governing mechanism of perpendicular magnetisation.
SCIENTIFIC REPORTS
(2021)
Article
Materials Science, Ceramics
Han-Yin Liu, Yu-Jie Liao, Hung-Yi Wu
Summary: This study investigates the deposition of InSnZnO thin films using mist chemical vapor deposition with different nitrogen/oxygen ratios of carrier gases. The results show that using nitrogen as the carrier gas leads to the highest field-effect mobility, and using a mixed nitrogen/oxygen carrier gas improves the electrical characteristics of the films.
CERAMICS INTERNATIONAL
(2022)
Article
Nanoscience & Nanotechnology
Dongil Ho, Sunwoo Choi, Hyunwoo Kang, Byungkyu Park, Minh Nhut Le, Sung Kyu Park, Myung-Gil Kim, Choongik Kim, Antonio Facchetti
Summary: Solution-processed metal-oxide thin-film transistors (TFTs) with different metal compositions were investigated for radiation hardness against ionizing radiation exposure. The amorphous zinc-indium-tin oxide (Zn-In-Sn-O or ZITO) was found to be an optimal radiation-resistant channel layer of TFTs due to its structural plasticity, defect tolerance, and high electron mobility. In situ irradiation experiments revealed three degradation mechanisms, including increase in channel conductivity, charge buildup in the interface and dielectric, and trap-assisted tunneling in the dielectric. By employing a radiation-resistant ZITO channel, a thin SiO2 dielectric, and a passivation layer, oxide-based TFTs demonstrated excellent stability under real-time gamma-ray irradiation.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Medicine, General & Internal
Bongju Han, Minji Park, Kyuseok Kim, Youngjin Lee
Summary: Low-dose exposure and work convenience are required for mobile X-ray systems during the COVID-19 pandemic. In this study, we investigated a novel X-ray detector with high-noise characteristics and low weight, which can improve image performance and confirm its feasibility in mobile X-ray devices that require low doses.
Article
Computer Science, Information Systems
Yeoungjin Chang, Ravindra Naik Bukke, Youngoo Kim, Kiwan Ahn, Jinbaek Bae, Jin Jang
Summary: We report a high-performance amorphous gallium indium tin oxide (a-IGTO) thin-film transistor (TFT) with a zirconium aluminum oxide (ZAO) gate insulator prepared by spray pyrolysis. The optimized a-IGTO TFT exhibits a field-effect mobility (mu(FE)) of 16 cm(2)V(-1)s(-1), a threshold voltage (V-TH) of -0.45 V, a subthreshold swing (SS) of 133 mV/dec., and an ON/OFF current ratio of approximately 10(8). The excellent stability of the a-IGTO TFT under positive-bias-temperature stress (PBTS) is attributed to the high film quality and reduced interfacial traps at the a-IGTO/ZAO interface.
Article
Energy & Fuels
Eunae Jo, Su Gil Kim, Kuldeep Singh Gour, Suyoung Jang, Jun Sung Jang, Jin Hyeok Kim
Summary: Cu2SnS3 (CTS) is a material with various crystal structures and a wide bandgap energy range. It has similar optical properties to Cu2ZnSnS4 (CZTS) and is attracting attention as an absorber material. However, there has been limited research on CTS thin film solar cells (TFSCs) on flexible substrates. In this study, the thickness of the CTS absorber layer was increased by doubling the thickness of the precursor, leading to improved performance and a higher power conversion efficiency.
Article
Chemistry, Analytical
Seung Gi Seo, Seung Jae Yu, Seung Yeob Kim, Jinheon Jeong, Sung Hun Jin
Summary: This study investigates the channel shape dependency on device instability for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs), finding that lateral E-field significantly affects device instability, especially for zigzag channel shapes. Additionally, the charge trapping time for zigzag-type a-IGZO TFTs is extracted as 3.8 x 10(4), indicating that local E-field enhancement can critically affect device reliability.
Article
Nanoscience & Nanotechnology
Katie Stallings, Jeremy Smith, Yao Chen, Li Zeng, Binghao Wang, Gabriele Di Carlo, Michael J. Bedzyk, Antonio Facchetti, Tobin J. Marks
Summary: Metal oxide semiconductors, such as a-IGZO, have shown impressive progress as alternatives to amorphous silicon in electronics applications, but require compatible unconventional gate dielectric materials. Solution-processable self-assembled nanodielectrics (SANDs) composed of alternating organic and inorganic oxide layers offer high capacitances and low processing temperatures, yet have not been implemented in the top-gate TFT architecture.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Analytical
Wen Zhang, Zenghui Fan, Ao Shen, Chengyuan Dong
Summary: The study showed that heat treatments in O-2 or air resulted in higher threshold voltage and off current, lower field-effect mobility, and slightly improved PBS stability for a-IGZO TFTs. On the other hand, annealing processes in vacuum or N-2 had almost no impact on the electrical performance of a-IGZO TFTs, but significantly improved their PBS stability.
