Fabrication and Characterization of P-implanted Si-nanowire Field-effect Transistors (n-SiNW FETs)

Published 2009 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Fabrication and Characterization of P-implanted Si-nanowire Field-effect Transistors (n-SiNW FETs)
Authors
Keywords
-
Journal
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 55, Issue 1, Pages 28-31
Publisher
Korean Physical Society
Online
2009-07-13
DOI
10.3938/jkps.55.28

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.