Effects of Oxygen Partial Pressure on the Electrical Characteristics of InGaZnO Thin Film Transistors

Title
Effects of Oxygen Partial Pressure on the Electrical Characteristics of InGaZnO Thin Film Transistors
Authors
Keywords
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Journal
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 54, Issue 1, Pages 121-126
Publisher
Korean Physical Society
Online
2009-06-24
DOI
10.3938/jkps.54.121

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