Article
Engineering, Electrical & Electronic
Yuanjie Lv, Yuangang Wang, Xingchang Fu, Shaobo Dun, Zhaofeng Sun, Hongyu Liu, Xingye Zhou, Xubo Song, Kui Dang, Shixiong Liang, Jincheng Zhang, Hong Zhou, Zhihong Feng, Shujun Cai, Yue Hao
Summary: This article reports the first vertical beta-Ga2O3 JBS diode, which successfully addresses the issue of sacrifice of p-type beta-Ga2O3 by using p-type NiO, achieving high breakdown voltage and low ON-resistance. Experimental results demonstrate that this diode has higher performance parameters and better combinations of forward current and breakdown voltage.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Computer Science, Information Systems
Pyeung Hwi Choi, Yong Pyo Kim, Min-Seong Kim, Jiheon Ryu, Sung-Hyun Baek, Sung-Min Hong, Sungbae Lee, Jae-Hyung Jang
Summary: The performance of a photoconductive semiconductor switch (PCSS) under two different load conditions, 50-Omega and 0.05-Omega, was investigated using a 532-nm pulsed laser. The PCSS exhibited significantly different output characteristics for the two different loads.
Article
Engineering, Electrical & Electronic
Li Zhu, Long Hu, Xin Shen, Yue Sun, Xin Li, Weihua Liu
Summary: This letter investigates the characteristics of GaAs photoconductive semiconductor switches (PCSSs) based on a composite electrode. The composite electrode consists of a layer of reticular reduced graphene oxide (RGO) and a multi-layer of metal (Ni/Ge/Au/Ni/Au). Experimental results show that the PCSS with a reticular-RGO/metal electrode exhibits reduced conducting current and delay jitter degeneration, indicating improved reliability. The enhanced performance is attributed to the reduction of interface damage between the substrate and electrode.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Optics
Zhicheng Dai, Yushen Liu, Guofeng Yang, Feng Xie, Chun Zhu, Yan Cu, Naiyan Lu, Qigao Fan, Yu Ding, Yuhang Li, Yingzhou Yu, Xiumei Zhang
Summary: In this study, AlGaN solar-blind ultraviolet metal-semiconductor-metal photodetectors with an Al composition of 0.55 were fabricated. The devices showed high spectral responsivity and external quantum efficiency, with current exhibiting a strong dependence on high temperatures. The Poole-Frenkel emission model and changing space charge regions were used to explain carrier transport and photoconductive gain mechanisms for the AlGaN PD, respectively.
CHINESE OPTICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Zhuoyun Feng, Chongbiao Luan, Longfei Xiao, Yangfan Li, Huiru Sha, Xun Sun, Xiufang Chen, Xiangang Xu, Hongtao Li
Summary: Radial lateral structure photoconductive switches fabricated using vanadium-doped 4H-SiC and high-purity 4H-SiC materials are studied in this work. The switches are triggered by 355 and 532 nm lasers, and their performance is compared under different applied voltages and laser energies. Experimental results demonstrate that the conduction current is larger when the laser is incident from the rear. Simulations of the current density distribution provide theoretical support for this phenomenon and indicate that the high-purity material has higher conduction current than the vanadium-doped material under the same conditions.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Pyeung Hwi Choi, Yong Pyo Kim, Min-Seong Kim, Jiheon Ryu, Sung-Hyun Baek, Sung-Min Hong, Sungbae Lee, Jae-Hyung Jang
Summary: High purity semi-insulating 4H-silicon carbide was utilized to fabricate lateral and vertical photoconductive semiconductor switches. Among them, the vertical PCSS demonstrated superior performance in terms of minimum ON-state resistance and output pulse amplitude.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Mickael Lallart
Summary: This article presents a technique that combines the series and parallel Synchronized Switch Harvesting on Inductor (SSHI) approaches for piezoelectric energy harvesting. Through numerical analysis and experimental validation, it is shown that this technique can widen the effective load and rectified voltage ranges, and potentially amplify the power output under certain conditions.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Ling Qin, Lei Zhou, Waqas Hassan, John Long Soon, Min Tian, Jiapeng Shen
Summary: This article proposes a family of transformer-less single-switch dual-inductor high voltage gain boost converters, achieving high voltage gain with low voltage and current stresses. Compared to other types of high voltage gain converters, this family has advantages of low component counts and reduced voltage stress on devices, while performing well in terms of conversion efficiency and cost.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Yuangang Wang, Hehe Gong, Yuanjie Lv, Xingchang Fu, Shaobo Dun, Tingting Han, Hongyu Liu, Xingye Zhou, Shixiong Liang, Jiandong Ye, Rong Zhang, Aimin Bu, Shujun Cai, Zhihong Feng
Summary: By implementing a composite terminal structure with a p-NiO junction termination extension and a small-angle beveled field plate, high-performance p-NiO/ss-Ga2O3 heterojunction diodes were successfully demonstrated. This structure significantly increases the breakdown voltage of ss-Ga2O3 and achieves low ON-resistance, making it a promising candidate for various applications.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Nanoscience & Nanotechnology
Jun Yeub Lee, Byeong-Kwon Ju, Kwan Hyun Cho
Summary: Investigated co-solvented solution properties and relations in sublimation transfer process and optimized IPL using ToF-SIMS. Co-solvented solution properties impact thickness and morphology of sublimation transferred patterns. Tuning solvent ratios and IPL energy resulted in maximizing current efficiency and external quantum efficiency.
Article
Automation & Control Systems
Yu Chen, Yue-E Wang, Di Wu
Summary: The paper investigates the design of hybrid state observer-based event-triggered controller for switched linear systems subject to quantized input and unknown but bounded additional disturbance and measurement noise. The study introduces a hybrid state observer and constructs a mode-dependent event-triggered mechanism to design controllers for the considered systems, addressing asynchronous control problems caused by switching. Criteria for system stability and establishment of controller gains are obtained through merging signal technique and multiple Lyapunov functional method, with simulation example illustrating the validity of the results.
JOURNAL OF THE FRANKLIN INSTITUTE-ENGINEERING AND APPLIED MATHEMATICS
(2021)
Article
Engineering, Electrical & Electronic
Keijo Jacobs, Mietek Bakowski, Per Ranstad, Hans-Peter Nee
Summary: This article investigates the performance of three differently optimized 10-kV SiC p-i-n diodes in high-power converters and compares them. The results show that using SiC diodes can reduce rectifier losses by 37%, compared to the use of Si diodes. The proportion of switching losses to total losses is low, indicating a higher possible operation frequency for SiC diodes.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Ramachandran Rajesh, Natarajan Prabaharan, T. K. Santhosh
Summary: In this paper, a new non-isolated high gain DC-DC converter topology is proposed to achieve a high-voltage conversion ratio without coupled inductors or transformers. The operation of the proposed topology is analyzed under different conduction modes and the theoretical analysis is validated through experimental results. The efficiency and power density of the proposed converter are measured at 90% and 1.03kW/L respectively.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2023)
Article
Engineering, Electrical & Electronic
Ming Xu, Hangtian Dong, Chun Liu, Yi Wang, Long Hu, Chunpeng Lan, Wei Luo, Harald Schneider
Summary: This study focuses on the transient performance of gallium arsenide photoconductive semiconductor switches (PCSSs) triggered by high-energy laser diodes under high bias electric fields at both single-shot and high frequency excitation. The results show that the electric field has a significant impact on the nonlinear characteristics, with a high carrier avalanche multiplication factor.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Nanoscience & Nanotechnology
Yuhong Wang, Hanxu Tai, Ruonan Duan, Ming Zheng, Wei Lu, Yue Shi, Jianwei Zhang, Xing Zhang, Yongqiang Ning, Jian Wu
Summary: Despite the achievements of traditional quantum-confined nanostructures, they face difficulty in enhancing device performance due to inherent gain bottleneck. This paper proposes a novel super-gain nanostructure based on self-assembled well-wire complex energy-band engineering to overcome this bottleneck. The nanostructure utilizes strain-driven indium segregation and growth orientation-dependent multi-atomic step effects to achieve ultra-wide and uniform super-gain spectra.
