Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 159, Issue 6, Pages H565-H569Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.057206jes
Keywords
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Funding
- National Natural Science Foundation of China [61176062]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
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The Cu2ZnSnS4 (CZTS) film was successfully prepared and the Raman peaks at 251, 288, 335 and 368 cm-1 were observed. The light absorption coefficient of CZTS film is higher than 104 cm-1 and the energy bandgap is estimated to be about 1.5 eV. The photo-current response under different electrical field was studied for CZTS film. Persistent photoconductivity effect was observed and the decay time of current was studied under different electrical fields. The decay time of current decreased from 218 s to 0.2646 s with the electrical field reducing from 1 V to 1 x 10-4 V, respectively.
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