Defect Reduction in Semipolar (11-22) GaN Grown on m-Sapphire Using Epitaxial Lateral Overgrowth

Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

(2010) N. Kriouche et al.   Nanoscale Research Letters

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

(2009) Yohei Enya et al.   Applied Physics Express

Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

(2009) X. Ni et al.   APPLIED PHYSICS LETTERS

Improved semipolar (112¯2) GaN quality using asymmetric lateral epitaxy

(2009) P. de Mierry et al.   APPLIED PHYSICS LETTERS

Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes

(2009) M. Meneghini et al.   APPLIED PHYSICS LETTERS

InGaN laser diodes with 50 mW output power emitting at 515 nm

(2009) Adrian Avramescu et al.   APPLIED PHYSICS LETTERS

Characterization of a-plane InGaN multiple-quantum wells grown on maskless lateral epitaxially overgrown a-plane GaN

(2008) Sung-Nam Lee et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Behaviors of Emission Wavelength Shift in AlInGaN-Based Green Laser Diodes

(2008) Sung-Nam Lee et al.   IEEE ELECTRON DEVICE LETTERS