GaN Schottky Barrier Photodetectors Prepared on Patterned Sapphire Substrate

A high quality GaN Schottky barrier photodetector (PD) was prepared on patterned sapphire substrates (PSSs) by metallorganic chemical vapor deposition. Compared with the PD prepared on a conventional flat sapphire substrate, we can reduce dark current and enhance responsivity. Under a -2 V applied bias, noise equivalent power and normalized detectivity (D*) were 9.08 x 10(-11) W and 1.74 x 10(10) cm Hz(0.5) W(-1), respectively, for the PD prepared on PSS. These values were also better than those achieved from the PD prepared on a flat sapphire substrate. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3374339] All rights reserved.