Review
Energy & Fuels
Jiaying Chen, Youtian Mo, Chaoying Guo, Jiansen Guo, Bingshe Xu, Xi Deng, Quan Xue, Guoqiang Li
Summary: The combination of III-V compound semiconductor materials and organic semiconductor materials is a potential pathway to solve the problems of conventional doped p-n junction solar cells. This review presents the recent progress of organic-inorganic hybrid solar cells based on polymers and III-V semiconductors, including materials, devices, growth processes, patterning and etching processes, advanced device structure designs, and optimization pathways for efficiency enhancement. The future development of such hybrid cells is also discussed.
Article
Nanoscience & Nanotechnology
Tuomas Haggren, Vidur Raj, Anne Haggren, Nikita Gagrani, Chennupati Jagadish, Hoe Tan
Summary: This report demonstrates the construction of a hole-selective III-V semiconductor solar cell on i-GaAs using copper iodide (CuI) and optimization of the GaAs surface passivation and oxygen content of CuI, leading to high open-circuit voltage and solar conversion efficiency.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Multidisciplinary
N. Carlon Zambon, Z. Denis, R. De Oliveira, S. Ravets, C. Ciuti, I. Favero, J. Bloch
Summary: By embedding quantum wells into semiconductor microresonators, tightly confined and mutually interacting excitonic, optical, and mechanical modes can coexist. In this study, we investigate the parametric modulation of optical and excitonic resonances by the interaction with a mechanical mode in the strong exciton-photon coupling regime. We find that the exciton-phonon coupling in semiconductors leads to a significant enhancement of polariton-phonon interactions, making it possible to achieve near-unity single-polariton quantum cooperativity on current semiconductor resonator platforms. We also analyze how polariton nonlinearities affect dynamical backaction, altering the ability to cool or amplify the mechanical motion.
PHYSICAL REVIEW LETTERS
(2022)
Article
Energy & Fuels
S. Catalan-Gomez, E. Martinez Castellano, M. Schwarz, M. Montes Bajo, L. Dorado Vargas, A. Gonzalo, A. Redondo-Cubero, A. Gallego Carro, A. Hierro, J. M. Ulloa
Summary: This study investigates the use of core-shell gallium nanoparticles as functional light scatterers on solar cells. By optimizing the nanoparticle size, the short-circuit current of the solar cells is significantly improved. The underlying physical mechanism is studied through optical measurements and simulations, and a method to reduce the plasmonic effect of the nanoparticles is demonstrated.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2024)
Article
Chemistry, Multidisciplinary
Yiping Fan, Xingming Ning, Qi Zhang, Huihuan Zhao, Jia Liu, Peiyao Du, Xiaoquan Lu
Summary: This study demonstrates a successful modulation of PEC performance by using a function-tunable strategy, achieving a significant increase in photocurrent density by depositing Ni-doped CoPi on a BV substrate. Moreover, similar excellent performance can also be achieved on an alpha-Fe2O3 photoanode.
Article
Materials Science, Multidisciplinary
Asta Griguceviciene, Putinas Kalinauskas, Laurynas Staisiunas, Konstantinas Leinartas, Algirdas Selskis, Eimutis Juzeliunas
Summary: This study presents a photoelectrochemical (PEC) method for depositing silicon and silicon-carbon layers at 40°C using silicon tetrachloride as a precursor. The semiconductor substrates are activated by white LED illumination to make them conductive, allowing for the deposition of amorphous layers. The proposed method has potential applications in batteries, anti-corrosion coatings, photovoltaics, and PEC electrodes for hydrogen production.
Article
Engineering, Mechanical
Anthony Moulins, Roberto Dugnani, Ricardo J. Zednik
Summary: Gallium arsenide (GaAs) is widely used in demanding semiconductor applications, but the fracture mechanisms are not well understood. A quantitative approach and detailed analysis help identify main fractographic features and estimate fracture constants. The fractographic features of GaAs correspond to the intrinsic symmetries of single-crystal GaAs.
ENGINEERING FAILURE ANALYSIS
(2021)
Article
Nanoscience & Nanotechnology
Oliver Bienek, Benedikt Fuchs, Matthias Kuhl, Tim Rieth, Julius Kuhne, Laura I. Wagner, Lina M. Todenhagen, Lukas Wolz, Alex Henning, Ian D. Sharp
Summary: III-V compound semiconductors have optoelectronic properties suitable for solar energy conversion. This study investigates the impact of defects in atomic layer deposition of titanium oxide (TiOx) on junction formation, interfacial charge transport, and photocarrier recombination. The results show that defect concentrations in TiOx can be controlled to modulate optical constants, electrical conductivity, and interface chemistry, allowing for tuning of junction formation and achieving high photovoltage photocathodes.
Article
Materials Science, Multidisciplinary
Audrey Gilbert, Michel Ramonda, Laurent Cerutti, Charles Cornet, Gilles Patriarche, Eric Tournie, Jean-baptiste Rodriguez
Summary: This study focuses on the control of antiphase domain formation and evolution in III-V semiconductor epitaxial growth on a low-miscut Si (001) substrate. The crystal polarity of thin GaAs epilayers grown through molecular-beam epitaxy is determined by the Si surface topology, resulting in a quasi-periodic 1D pattern of antiphase domains in the GaAs layer. The study also demonstrates how this configuration breaks the symmetry between different III-V phases, leading to early burying of antiphase domains in GaAs epitaxially grown on a low-miscut Si substrate.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Micha Ben-Naim, Chase W. Aldridge, Myles A. Steiner, Reuben J. Britto, Adam C. Nielander, Laurie A. King, Todd G. Deutsch, James L. Young, Thomas F. Jaramillo
Summary: This study provides a systematic investigation into the durability of GaInP2 systems and finds that the photocathode with both a capping layer and window layer demonstrates the highest PEC performance and longest lifetime.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Analytical
Pierre Fehlen, Guillaume Thomas, Fernando Gonzalez-Posada, Julien Guise, Francesco Rusconi, Laurent Cerutti, Thierry Taliercio, Denis Spitzer
Summary: Chemical warfare agents, such as sarin, are highly lethal to humans and require sensitive and selective detection. Infrared absorption spectroscopy is a powerful technique, but the mismatch between infrared light wavelength and molecule absorption cross-section dimensions reduces sensitivity. To address this, a plasmonic sensor using III-V semiconductors InAsSb with nano-antennas and enhanced electric field was proposed. Experiments using a sarin simulant showed that the sensor successfully detected the molecule at low concentrations. This work demonstrates the application of III-V semiconductor plasmonics for gas sensing of complex molecules using surface-enhanced infrared absorption.
SENSORS AND ACTUATORS B-CHEMICAL
(2023)
Article
Energy & Fuels
Yukun Sun, Shizhao Fan, Daehwan Jung, Ryan D. Hool, Brian Li, Michelle Vaisman, Minjoo Lee
Summary: This study shows that delta-doping significantly improves the performance of tunnel junctions used as interconnects in III-V multijunction solar cells. Delta-doping performs even better in tunnel junctions based on wider-bandgap materials with reduced optical absorption. Importantly, delta-doped tunnel junctions can withstand the thermal loads encountered during the growth of additional subcells.
IEEE JOURNAL OF PHOTOVOLTAICS
(2022)
Article
Materials Science, Multidisciplinary
Theodore A. Gazis, Ashleigh J. Cartlidge, Peter D. Matthews
Summary: With stricter environmental regulations, quantum dots made from cadmium, lead, and other heavy metals are no longer favored. III-V semiconductors offer a promising alternative as they surpass the optoelectronic properties of classical quantum dots. However, their synthesis is challenging, hindering widespread adoption. In this perspective, we present and compile various synthetic routes to III-V quantum dots, identifying gaps in the field and highlighting future perspectives.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Physics, Multidisciplinary
Shi Heng-Xian, Yang Kai-Ke, Luo Jun-Wei
Summary: Thermal management of devices requires materials with high thermal conductivity, and boron arsenide in the group III-V boron compounds shows abnormal thermal properties due to its large frequency gap and energy discontinuity, providing insights for designing new semiconductor materials with high thermal conductivities.
ACTA PHYSICA SINICA
(2021)
Article
Electrochemistry
A. M. Goncalves, G. Visagli, C. P. Rakotoarimanana, C. Njel, M. Fregnaux, A. Etcheberry
Summary: This study investigates the photoanodic behavior of undoped n-InP in liquid ammonia at low temperature under atmospheric pressure for the first time. The low doping level allows monitoring of charge transfer at the interface by only involving photo-generated holes in the passivation mechanism. Specific photoanodic transient phenomena are observed due to the availability of photo-holes at the interface, which depends on light intensity.
ELECTROCHIMICA ACTA
(2023)
