Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor
Published 2015 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 5, Pages 053119
Publisher
AIP Publishing
Online
2015-02-07
DOI
10.1063/1.4907894
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
- (2014) Dohun Kim et al. NATURE
- Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
- (2014) E. Kawakami et al. Nature Nanotechnology
- Single-Shot Readout and Relaxation of Singlet and Triplet States in Exchange-CoupledP31Electron Spins in Silicon
- (2014) Juan P. Dehollain et al. PHYSICAL REVIEW LETTERS
- Electron spin resonance and spin–valley physics in a silicon double quantum dot
- (2014) Xiaojie Hao et al. Nature Communications
- Back-action-driven electron spin excitation in a single quantum dot
- (2013) Gang Cao et al. NEW JOURNAL OF PHYSICS
- Charge Relaxation in a Single-ElectronSi/SiGeDouble Quantum Dot
- (2013) K. Wang et al. PHYSICAL REVIEW LETTERS
- Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
- (2013) C. H. Yang et al. Nature Communications
- Back-action-induced non-equilibrium effect in electron charge counting statistics
- (2012) HaiOu Li et al. APPLIED PHYSICS LETTERS
- Key capacitive parameters for designing single-electron transistor charge sensors
- (2012) Kosuke Horibe et al. JOURNAL OF APPLIED PHYSICS
- Coherent singlet-triplet oscillations in a silicon-based double quantum dot
- (2012) B. M. Maune et al. NATURE
- Quantum interference and phonon-mediated back-action in lateral quantum-dot circuits
- (2012) G. Granger et al. Nature Physics
- Orbital and valley state spectra of a few-electron silicon quantum dot
- (2012) C. H. Yang et al. PHYSICAL REVIEW B
- Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots
- (2012) G. Yamahata et al. PHYSICAL REVIEW B
- Single-Shot Measurement of Triplet-Singlet Relaxation in aSi/SiGeDouble Quantum Dot
- (2012) J. R. Prance et al. PHYSICAL REVIEW LETTERS
- Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
- (2011) M. G. Borselli et al. APPLIED PHYSICS LETTERS
- Spin filling of valley–orbit states in a silicon quantum dot
- (2011) W H Lim et al. NANOTECHNOLOGY
- Electron spin coherence exceeding seconds in high-purity silicon
- (2011) Alexei M. Tyryshkin et al. NATURE MATERIALS
- A graphene quantum dot with a single electron transistor as an integrated charge sensor
- (2010) Lin-Jun Wang et al. APPLIED PHYSICS LETTERS
- Measurement Back-Action in Quantum Point-Contact Charge Sensing
- (2010) Bruno Küng et al. Entropy
- Interlaced Dynamical Decoupling and Coherent Operation of a Singlet-Triplet Qubit
- (2010) C. Barthel et al. PHYSICAL REVIEW LETTERS
- Statistical electron excitation in a double quantum dot induced by two independent quantum point contacts
- (2009) U. Gasser et al. PHYSICAL REVIEW B
- Noise-induced spectral shift measured in a double quantum dot
- (2009) B. Küng et al. PHYSICAL REVIEW B
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started