Article
Physics, Multidisciplinary
Hui-Fang Xu, Wen Sun, Na Wang
Summary: The proposed ESBG TFET combines the advantages of extended-source, broken gate, and hetero-gate-dielectric technologies to enhance its performance in terms of direct-current and radio-frequency parameters. The influence of source region length on the device's performance is analyzed, showing that the ESBG TFET exhibits high on-state current and good linearity distortion parameters.
Article
Engineering, Electrical & Electronic
Anastasia Svetlova, Dmitry Kireev, Guillermo Beltramo, Dirk Mayer, Andreas Offenhaeusser
Summary: Graphene field-effect transistors are commonly used in biosensor development, but questions remain about gate/leakage currents in electrolyte-gated configurations. Gate currents in graphene can be capacitive or Faradic, depending on doping by holes or electrons. Faradic currents are related to oxygen reduction in solution and increase with measurement cycles, indicating enhanced electroactivity towards electron transfer.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Bor-Wei Liang, Wen-Hao Chang, Hung-Yu Lin, Po-Chun Chen, Yi-Tang Zhang, Kristan Bryan Simbulan, Kai-Shin Li, Jyun-Hong Chen, Chieh-Hsiung Kuan, Yann-Wen Lan
Summary: The study demonstrates a vertical graphene-based hot-electron transistor operating in the radio frequency regime, showing high current density and gains, with the cutoff frequency tunable by varying the collector-base bias.
Article
Materials Science, Multidisciplinary
Diego Calvo Ruiz, Daxin Han, Giorgio Bonomo, Tamara Saranovac, Olivier Ostinelli, Colombo R. Bolognesi
Summary: Offsetting the gate closer to the source can enhance the maximum oscillation frequency and cutoff frequency of HEMTs, but it may result in degraded noise performances.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2021)
Article
Nanoscience & Nanotechnology
Luca Anzi, Artur Tuktamyshev, Alexey Fedorov, Amaia Zurutuza, Stefano Sanguinetti, Roman Sordan
Summary: This study demonstrates a GaAs FET with a monolayer graphene gate, where the threshold voltage can be externally controlled by an additional control gate. The graphene gate forms a Schottky junction with the transistor channel, allowing for modulation of channel conductivity and threshold voltage control.
NPJ 2D MATERIALS AND APPLICATIONS
(2022)
Article
Chemistry, Multidisciplinary
Qiwen Peng, Qiankun Zeng, Fangbing Wang, Xiaoyuan Wu, Runxi Zhang, Guoyue Shi, Min Zhang
Summary: In this study, an integrated sensor for monitoring ONOO- was developed, which demonstrated high sensitivity and selectivity. Using this sensor, the researchers successfully tracked the levels of ONOO- in the brain tissue of AD transgenic mice at early stages and explored the role of ONOO- in the occurrence and development of AD.
Article
Chemistry, Physical
Yantao Zhang, Yubin Yuan, Guiming Cao, Chuanyu Han, Xin Li, Xiaoli Wang, Guohe Zhang, Li Geng, Weihua Liu
Summary: A unique photoresponse of graphene field-effect transistor to laser pulse after a switch of back-gate voltage, referred as fresh-bias photoresponse (FBPR), is reported. FBPR suggests a prompt charge transfer process triggered by laser illumination, and the transferred charge remains as long as the back-gate voltage remains unchanged. This mechanism may offer a new approach for developing phototransistors, photodetectors or photoelectronic memory devices in the future.
Article
Chemistry, Multidisciplinary
Qingguo Gao, Chongfu Zhang, Ping Liu, Yunfeng Hu, Kaiqiang Yang, Zichuan Yi, Liming Liu, Xinjian Pan, Zhi Zhang, Jianjun Yang, Feng Chi
Summary: This study investigates the impact of back-gate control on the performance of MoS2 high-frequency transistors, revealing that back-gate modulation can reduce contact resistances and improve on-current and frequency metrics.
Article
Nanoscience & Nanotechnology
Carsten Strobel, Carlos A. Chavarin, Karola Richter, Martin Knaut, Johanna Reif, Sandra Voelkel, Andreas Jahn, Matthias Albert, Christian Wenger, Robert Kirchner, Johann W. Bartha, Thomas Mikolajick
Summary: A graphene-based three-terminal barristor device was proposed to overcome the low on/off ratios and insufficient current saturation of conventional graphene field-effect transistors. This device, called graphene adjustable-barriers transistor (GABT), utilizes a semiconductor-based gate to modulate the device currents and demonstrates high current gain. The functionality of a silicon-graphene-germanium GABT with ultra-high current gain was successfully demonstrated.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Carsten Strobel, Carlos A. Chavarin, Karola Richter, Martin Knaut, Johanna Reif, Sandra Voelkel, Andreas Jahn, Matthias Albert, Christian Wenger, Robert Kirchner, Johann W. Bartha, Thomas Mikolajick
Summary: In this study, a novel graphene-based transistor called graphene adjustable-barriers transistor (GABT) was proposed and analyzed. It utilizes a semiconductor-based gate to modulate the device currents, overcoming the low on/off ratios and insufficient current saturation of conventional graphene transistors.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Jaeyong Jeong, Seong Kwang Kim, Jongmin Kim, Dae-Myeong Geum, Duckhyun Kim, Eunju Jo, Hakcheon Jeong, Juyeong Park, Jae-Hyung Jang, Shinhyun Choi, Inyong Kwon, Sanghyeon Kim
Summary: Next-generation wireless communication requires high-frequency, multi-functionality, and power-efficient systems. To achieve this, researchers have been working on the monolithic integration of III-V compound semiconductor and Si CMOS technology. In this study, they successfully demonstrated heterogeneous and monolithic 3D analog/RF-digital mixed-signal integrated circuits that combine InGaAs HEMTs with high f(T) and f(MAX) and Si CMOS mixed-signal circuits, achieving high unity current gain cutoff frequency and power gain cutoff frequency without interference.
Article
Chemistry, Multidisciplinary
Zhaowu Tang, Chunsen Liu, Xiaohe Huang, Senfeng Zeng, Liwei Liu, Jiayi Li, Yu-Gang Jiang, David Wei Zhang, Peng Zhou
Summary: In the process of continuously scaling transistor feature sizes, a transistor with a new mechanism is needed to break through the thermionic limit of subthreshold swing (SS) while maintaining a large drive current. By adopting the Dirac-source field-effect transistor (DSFET) technology, a MoS2/graphene DSFET is experimentally demonstrated for the first time, showing a steep SS and bringing in gate-all-around (GAA) structure further improves the transistor's performance in terms of SS and drive current, making it suitable for low-power and high-performance electronics applications.
Article
Engineering, Electrical & Electronic
Minye Yang, Zhilu Ye, Chia-Heng Sun, Liang Zhu, Mehdi Hajizadegan, Pai-Yen Chen
Summary: This article proposes and numerically studies a fully passive and lightweight intermodulation sensor based on the reconfigurable graphene field-effect transistors (GFETs) oscillator and passive frequency mixer. The output frequency of the self-powered GFET-based oscillator can be sensitive to the surface doping effect caused by charged surface absorbates, reactive gases, contaminations, or aqueous solutions. The intermodulation sensor effectively suppresses unwanted clutters, self-jamming, and interferences by mixing low-frequency signals with incident radio frequency (RF) waves.
IEEE SENSORS JOURNAL
(2023)
Article
Instruments & Instrumentation
Ethan Huegler, Joshua C. Hill, David H. Meyer
Summary: The article describes a microcontroller-based interface that utilizes the internal linear sweep accumulator of the DDS to implement an agile RF source. The system allows for fast and accurate scanning and updating of parameters, improving the flexibility and efficiency of the source.
REVIEW OF SCIENTIFIC INSTRUMENTS
(2023)
Article
Materials Science, Multidisciplinary
Kalyan Mondol, Mehedi Hasan, Abdul Hasib Siddique, Sharnali Islam
Summary: In this work, the effects of changing device parameters on n-type double gate silicon tunneling field effect transistor (TFET) are investigated. Multiple parameters are considered to evaluate the device's performance. It is found that short channel length, high gate dielectric material, and effective mass equal to or more than 0.04 mo show promising performance.
RESULTS IN PHYSICS
(2022)
