Article
Nanoscience & Nanotechnology
M. Z. Wei, J. Z. Huo, C. C. Wang, Y. J. Ma, H. Z. Pan, Z. H. Cao, X. K. Meng
Summary: The hardness of Ag/Nb/Cu/Nb multilayers with Nb amorphous interlayer was found to be significantly improved compared to Ag/Cu multilayers. The length scale effect of strengthening became broader in the range of 5-60 nm. The addition of Nb amorphous interlayer contributed to the enhancement by introducing modulus mismatch and crystal/amorphous interfaces (CAIs) that increased resistance to dislocation transmission and inhibited deformation of the amorphous layer.
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
(2022)
Article
Materials Science, Multidisciplinary
Xianqiang Chu, Xiaoqi Jiang, Hui Zhang, Cheng Wang, Fangzhi Huang, Xiaoyu Sun, Shikuo Li
Summary: This study presents the preparation of ordered Al-doped SrTiO3/TiO2 heterojunction nanorod arrays (Al-STO/TiO2 HNRAs) for efficient piezo-photocatalysis. The Al doping helps modulate the migration and separation of charge carriers and prolongs the charge lifetime. Under co-excitation of ultrasonic and ultraviolet irradiation, the Al-STO/TiO2 HNRAs display a significantly higher oxidation rate constant compared to the un-doped sample.
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Chemistry, Physical
Lei Fu, Jun Zhou, Jiaming Yang, Qinghao Li, Haomin Guo, Qinyuan Deng, Zihe Zhu, Zixuan Zhang, Haoyu Yu, Kai Wu
Summary: Supported metal-metal oxide heterojunctions are widely used in catalysts for energy conversion and storage devices. The interaction between metal and supports is crucial for developing new catalysts. This study investigates the effect of an external electric field and circumstances on the charge transfer within a Cu/SrTiO3 heterojunction. The results show that the external electric field can switch the specific behavior of charge transfer, and the circumstances surrounding the heterojunction also influence charge transfer.
APPLIED SURFACE SCIENCE
(2022)
Article
Nanoscience & Nanotechnology
R. F. Niu, D. P. Wang, L. Q. Cui, W. T. Wang
Summary: All-perovskite oxide heterostructure of SrSnO3/Nb-doped SrTiO3 was fabricated and investigated for its unusual transport properties. Diodelike rectifying behavior was observed in the forward current while the temperature-dependent IV curves showed tunneling effects in the reverse bias. The electrical transport mechanism was explained using the thermionic emission model and the Poole-Frenkel emission.
Article
Chemistry, Multidisciplinary
Su-Xian Yuan, Ke Su, You-Xiang Feng, Min Zhang, Tong -Bu Lu
Summary: The regulation of heterostructure interface to promote interfacial charge separation is an effective method to enhance the photocatalytic CO2 reduction of halide perovskite. In this study, a 2D CsPbBr3/SrTiO3 heterostructure was fabricated using an in-situ growth strategy. The lattice matching and matchable energy band structures between CsPbBr3 and SrTiO3 enable efficient interfacial charge separation in the heterostructure. The resulting heterostructure exhibits impressive photocatalytic CO2 conversion activity.
CHINESE CHEMICAL LETTERS
(2023)
Article
Chemistry, Physical
Betul Akkopru-Akgun, Susan Trolier-McKinstry
Summary: Lead zirconate titanate (PZT) films with high Nb concentrations (6-13 mol%) were fabricated by chemical solution deposition method. The stoichiometry of the films can be self-compensated up to 8 mol% Nb, and single phase films can be obtained with 10 mol% PbO excess in the precursor solution. However, higher Nb concentrations resulted in multi-phase films unless the excess PbO level was reduced. The dielectric and piezoelectric properties of the films were significantly degraded with increased Nb concentrations, but can be improved by reducing the PbO level to 6 mol%.
Article
Chemistry, Multidisciplinary
Xixian Li, Chenchen Ji, Jinke Shen, Jianze Feng, Hongyu Mi, Yongtai Xu, Fengjiao Guo, Xingbin Yan
Summary: This work designs an amorphous manganese borate (a-MnBOx) material to improve the electrochemical performance of Zn-Mn batteries, achieving high specific capacity, high energy density, and cycling stability.
Article
Materials Science, Multidisciplinary
Deepak Kumar, Ashwin A. Tulapurkar, C. Tomy
Summary: We investigated the proximity effect between ferromagnetic and charge-ordered antiferromagnetic bilayer thin film samples. The results showed that decreasing the thickness of the ferromagnetic layer led to a decrease in both the ferromagnetic transition and metal to insulator transition temperature, an increase in magnetic moments and coercivity. The transport measurement revealed that LSMO remained insulating at low temperatures for a thickness as small as 5 nm. Additionally, a 2 nm thick LSMO bilayer thin film exhibited insulating behavior up to 50 kOe and showed a clear metal to insulator transition when a magnetic field greater than or equal to 70 kOe was applied.
MATERIALS CHEMISTRY AND PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Maria Isabel Pintor-Monroy, Martin Gregorio Reyes-Banda, Carlos Avila-Avendano, Manuel A. Quevedo-Lopez
Summary: In this study, a simple and cost-effective method for fabricating thin film transistors (TFTs) based on undoped amorphous Ga2O3 thin films deposited at room temperature by magnetron sputtering is discussed. The control of Ga2O3 thin film resistivity over a wide range is demonstrated by controlling the deposition power and pressure. These TFTs exhibit promising characteristics and have been evaluated as phototransistors under DUV radiation, showing high rejection ratio, responsivity, gain, detectivity, and photosensitivity.
IEEE SENSORS JOURNAL
(2021)
Article
Chemistry, Inorganic & Nuclear
Tran Thi Thanh, Nguyen Van Du, Jihee Bae, Soo Yong Choi, Tauseef Ahmed, Salman Ali Khan, Jung Young Cho, Woo Hyun Nam, Duc Duy Le, Soonil Lee
Summary: The study investigated the combined effect of La/Nb doping and RGO coating on improving the electrical conductivity and thermoelectric efficiency of STO materials, resulting in the enhancement of the figure of merit by about 6.5 times through a combinatorial procedure of solid-state reaction, RGO coating, and SPS process.
SOLID STATE SCIENCES
(2021)
Article
Materials Science, Ceramics
Yu Pei, Lingyan Liang, XiaoLong Wang, Kun Wang, HengBo Zhang, ZhenDong Wu, HaiJuan Wu, Hongliang Zhang, Junhua Gao, Hongtao Cao
Summary: The study demonstrates that regulating the substrate bias voltage can effectively modify the chemical composition, optical, morphological, and electrical properties of a-GaOx films, reducing defects. Deep-ultraviolet photodetectors based on optimized thin films show high responsivity and rejection ratio for UV/vis. wavelengths.
CERAMICS INTERNATIONAL
(2021)
Article
Engineering, Electrical & Electronic
Y. S. Yuan, Z. L. Lv, J. P. Cao, K. K. Meng, G. L. Zhao, K. Lin, Q. Li, X. Chen, Q. H. Li, X. H. Li, Y. L. Cao, J. X. Deng, X. R. Xing, Jun Miao
Summary: PbZr0.2Ti0.8O3/La2Zr2O7 (PZT/LZO) bilayer and amorphous La2Zr2O7 thin films were fabricated and showed a typical and robust bipolar resistive switching (RS) behavior at room temperature. The PZT/LZO bilayer exhibited a better RS property compared to the LZO single film, with a higher HRS/LRS ratio. The PZT/LZO structure also showed a stable degradation RS performance until 10(3) cycles at room temperature, and the conduction mechanisms in both PZT/LZO bilayer and LZO single film were identified.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Optics
Hadi Bashiri, Mohammad Azim Karami, Shahram Mohammad Nejad
Summary: This study presents an analytical model to investigate the physical aspects and properties of a novel silicon solar cell structure, showing that enhancements in field effect passivation and reduced sensitivity of surface potential to interface defect densities can boost solar cell performance. By varying doping concentration and thickness, the electric field can be increased in both the front and back surfaces of the solar cell.
OPTICS AND LASER TECHNOLOGY
(2021)
Article
Materials Science, Multidisciplinary
Himadri Roy Dakua
Summary: This study reports the exchange bias effect in a bilayer thin film of ZFO and GFO, showing a significant effect at low temperatures that decreases and disappears as temperature rises, related to training effect and spin relaxation models.
MATERIALS RESEARCH BULLETIN
(2021)
Article
Materials Science, Multidisciplinary
Yingnan Quan, Xiang-Hu Tang, Wenjing Lu, Wang Huo, Zongyin Song, Wei Shen, Meng Yang, Xing-Jiu Huang, Wen-Qing Liu
Summary: This study proposes a new substrate material, CA-V-TiO2, which achieves energy level matching and charge-transfer resonance through the regulation of vacancies and amorphous state, optimizing the performance of SERS substrate. The CA-V-TiO2 substrate enables sensitive detection of chloramphenicol with low detection limit, good reproducibility, and high stability.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Physics, Multidisciplinary
Li-Li Yang, Yu-Si Peng, Zeng Liu, Mao-Lin Zhang, Yu-Feng Guo, Yong Yang, Wei-Hua Tang
Summary: A self-powered solar-blind ultraviolet (UV) photodetector (PD) was successfully fabricated on a Ga2O3/Bi2WO6 heterojunction. The PD demonstrated a distinct photovoltaic effect and excellent photodetection performance with an ultra-low dark current and a high light-to-dark current ratio in self-powered mode. The PD also showed a stable and fast response speed under different light intensities and voltages. Overall, the Ga2O3/Bi2WO6 heterojunction has the potential to be a candidate for self-powered and high-performance UV photodetectors.
Article
Physics, Multidisciplinary
Jian-Ying Yue, Xue-Qiang Ji, Shan Li, Xiao-Hui Qi, Pei-Gang Li, Zhen-Ping Wu, Wei-Hua Tang
Summary: In this study, solar-blind ultraviolet photodetectors with metal-semiconductor-metal structure were fabricated using β-(Al0.25Ga0.75)x(2)O(3)/β-Ga2O3 film. The performance of the β-Ga2O3 detector was significantly improved after surface passivation with β-(Al0.25Ga0.75)(2)O-3.
Article
Engineering, Electrical & Electronic
Jiawei Zhang, Yixuan Cui, Chunxiao Liu, Xiangfu Wang, Weihua Tang
Summary: This paper introduces a new flexible pressure sensor designed with LIG/AgNWs composite to improve ultra-high sensitivity and stability. The dependence of sensor property on LIG/NMP concentration and coating layers was studied, and the sensor showed good sensitivity (56.9 kPa(-1)) and stable performance. Its application in bending fingers and high fives was also studied, and results demonstrate its suitability for human body dynamic posture monitoring.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Review
Physics, Applied
Zeng Liu, Weihua Tang
Summary: This article discusses the recent progress of Ga2O3-based Schottky photodiodes and provides suggestions for Schottky metal selection, interfacial barrier modulation, space electric field adjustment, energy band engineering, and improvement of photodetection performance, aiming to promote the further development of deep-ultraviolet photodetection in the near future.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Instruments & Instrumentation
Zeng Liu, Shaohui Zhang, Maolin Zhang, Junpeng Fang, Ling Du, Jian Zhang, Chang Xu, Yufeng Guo, Weihua Tang
Summary: In this paper, a Ga2O3-based pressure sensor is introduced using the technique of metalorganic chemical vapor deposition thin film growth. Although Ga2O3 is an important semiconductor material for functional electronics and optoelectronics, there has been limited research on Ga2O3-based pressure sensors. However, this study demonstrates that the fabricated Ga2O3-based pressure sensor exhibits good sensing performance for different pressures. The sensor shows an increase in current by two orders of magnitude under a pressure of 5 kPa. Additionally, the response/release times were measured under different pressures ranging from 1 to 20 kPa. This work provides a potential method for constructing smart pressure sensors based on functional Ga2O3.
SMART MATERIALS AND STRUCTURES
(2023)
Article
Multidisciplinary Sciences
Qingyi Zhang, Ning Li, Tao Zhang, Dianmeng Dong, Yongtao Yang, Yuehui Wang, Zhengang Dong, Jiaying Shen, Tianhong Zhou, Yuanlin Liang, Weihua Tang, Zhenping Wu, Yang Zhang, Jianhua Hao
Summary: By lattice and band engineering, Zhang et al. constructed a unipolar barrier avalanche photodiode with suppressed dark current and reinforced reverse breakdown. Ga2O3-based solar blind avalanche photodetectors exhibit low voltage operation, optical filter-free and monolithic integration of photodetector arrays, and therefore they are promising to be an alternative to the bulky and fragile photomultiplier tubes for weak signal detection in deep-ultraviolet region. These findings provide insights into precise manipulation of band alignment in avalanche photodetectors, and also offer exciting opportunities for further developing high-performance Ga2O3-based electronics and optoelectronics.
NATURE COMMUNICATIONS
(2023)
Article
Physics, Applied
Shan Li, Lili Yang, Zeng Liu, Maolin Zhang, Yufeng Guo, Weihua Tang
Summary: This study reported an ultraviolet photodetector constructed on a simple vertical PEDOT:PSS/SiC hybrid heterojunction, which demonstrated superior self-powered performance. The SiC based photodetector achieved self-powered responsivity over A/W level, comparable with many reported 4H-SiC avalanche photodiodes, due to the abundant charge carrier concentration in 4H-SiC substrate and the large built-in field at PEDOT:PSS/SiC heterointerface. The fabricated PD showed high responsivity, detectivity, and external quantum efficiency, fast rise/decay time, large on-off switching ratio, high spectral rejection ratio, and long lifetime reliability.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Lei Li, Zeng Liu, Kai Tang, Shu-Lin Sha, Shao-Hui Zhang, Ming-Ming Jiang, Mao-Lin Zhang, Ang Bian, Yu-Feng Guo, Wei-Hua Tang
Summary: In this study, a Ga-doped ZnO/AlGaN heterojunction is introduced for UV photodetection, which is enhanced by the pyro-photoelectric effect coupling. The self-powered UV photodetector exhibits a responsivity of 0.063 mA W-1 under illumination and an increased photocurrent of 45 pA after pyro-photoelectric enhancement. The heterojunction UV photodetector can operate in both forward-biased photoconductive mode and reverse-biased depletion mode, with a fast temporal laser response.
IEEE SENSORS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Li-Li Yang, Zeng Liu, Qiang Xu, Mao-Lin Zhang, Shan Li, Yu-Feng Guo, Wei-Hua Tang
Summary: By introducing sporadic Ag nanostructures via a facile room-temperature magnetron sputtering technology and subsequent low-temperature annealing process, a local Schottky junction is formed at the interface between In electrodes and amorphous Ga2O3 film in the InAg/amorphous Ga2O3-In metal-semiconductor-metal (MSM) photodetector. The constructed Schottky barriers result in an extremely low dark current and excellent photodetection performance.
IEEE SENSORS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Maolin Zhang, Wanyu Ma, Shan Li, Lili Yang, Zeng Liu, Yufeng Guo, Weihua Tang
Summary: By fabricating and studying a Ga2O3 metal-semiconductor-metal (DUV PD) detector, we found that it has good detection performance, but the performance decreases with increasing temperature.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Crystallography
Suhao Yao, Kemeng Yang, Lili Yang, Ganrong Feng, Maolin Zhang, Yufeng Guo, Weihua Tang
Summary: This study investigated the performance of beta-Ga2O3-based Schottky barrier diodes (SBDs) with floating metal rings (FMRs) using numerical simulations. The simulation parameters of beta-Ga2O3 were extracted from experimental results. The device exhibited similar forward conduction characteristics to SBDs without FMRs and its breakdown characteristics were influenced by various structural parameters. An optimized device achieved a breakdown voltage 2.5 times higher than a device without FMRs. The study also showed that the breakdown voltage with such structures can reach at least 1.5 times higher than that of a device without FMRs for general conditions.
Article
Engineering, Electrical & Electronic
Gao-Hui Shen, Zeng Liu, Mao-Lin Zhang, Yu-Feng Guo, Wei-Hua Tang
Summary: This paper introduces a 16 x 16 Ga2O3 photodetector array, in which Ga2O3 thin film was deposited on a c-sapphire substrate using metal-organic chemical vapor deposition. The array device was constructed through UV photolithography, lift-off, and electron-beam evaporation techniques. The photodetector showed good wavelength selectivity with a high rejection ratio of 8 x 10(3). It exhibited a fast response ability, with a rise time of 6 ms and a decay time of 48 ms, when excited by a laser. The dark current of the 256 pixels in the array ranged from 2 pA to 4 pA, without any disparity.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Zeng Liu, Shu-Lin Sha, Gao-Hui Shen, Ming-Ming Jiang, Mao-Lin Zhang, Yu-Feng Guo, Wei-Hua Tang
Summary: In this letter, an improved Ga2O3 solar-blind photodetector is presented, which utilizes Ga2O3 thin film grown by metalorganic chemical vapor deposition. The introduction of Pt nanoparticles as decoration on the Ga2O3 photodetector resulted in significant enhancements in responsivity, detectivity, and external quantum efficiency. The improvement is attributed to the resonance between optimal Pt nanoparticles and Ga2O3, leading to enhanced photon absorbance and carrier injection.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Qing Yao, Jing Chen, Yuxuan Dai, Jiafei Yao, Jun Zhang, Maolin Zhang, Jianhua Liu, Weihua Tang, Jinping Zhang, Bo Zhang, Yufeng Guo
Summary: In this article, a novel technique for predicting the static output characteristics of IGBTs is proposed by combining compact models and artificial neural networks (ANNs). The method utilizes model parameters in the electronic design automation (EDA) circuit simulator to obtain output characteristics, and a phased prediction (PP) scheme is introduced to reduce the prediction error. The effectiveness of the method is verified by comparing results with TCAD simulation and datasheet, and the method significantly improves speed and reduces design cost compared to TCAD simulation.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Xue-Qiang Ji, Ming-Yu Liu, Zu-Yong Yan, Shan Li, Zeng Liu, Xiao-Hui Qi, Jian-Ying Yuan, Jin-Jin Wang, Yuan-Chun Zhao, Wei-Hua Tang, Pei-Gang Li
Summary: A surface VO defect compensation engineering using oxygen-plasma treatment was conducted to improve the device performance of beta-Ga2O3 film. The treated photodetectors showed significantly improved dark current, responsivity rejection ratio, rise and decay speed, and high sensitivity to detect weak UV signals.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
