Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4935082
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Funding
- National Basic Research Program of China [2013CB922303, 2011CB922200]
- National Nature Science Foundation of China [51372064, 11504076]
- Nature Science Foundation for Distinguished Young Scholars of Hebei Province [A2013201249]
- One Hundred Talent Project of Hebei Province [E2013100013]
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Ferromagnet/semiconductor heterostructure, such as Fe/GaAs, is always one of the key issues in spintronics due to its prerequisite for the realization of spin sensitive devices. In this letter, a lateral photoelectric effect (LPE) was observed in Fe/GaAs. Our results show that the sensitivity was not related to laser wavelength, but only proportional to laser power, suggesting that the lateral photovoltage was induced by photo-thermo-electric effect. Moreover, we also observe that the voltage signal increases with the increase in applied field due to decreasing scattering probability for spin-polarized electrons. Our finding of LPE adds another functionality to the Fe/GaAs system and will be useful in development of spin-polarized voltage devices. (C) 2015 AIP Publishing LLC.
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