Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4931751
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Funding
- Engineering and Physical Sciences Research Council [EP/M009297]
- EPSRC [EP/M009297/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/M009297/1] Funding Source: researchfish
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hybrid density functional theory calculations. At the O-rich limit, Ni vacancies are the lowest cost defect for all Fermi energies within the gap, in agreement with the well-known p-type behaviour of NiO. However, the ability of the metal electrode in a resistive random access memory metal-oxide-metal setup to shift the oxygen chemical potential towards the O-poor limit results in unusual NiO behaviour and O vacancies dominating at lower Fermi energy levels. Calculated band diagrams show that O vacancies in NiO are positively charged at the operating Fermi energy giving it the advantage of not requiring a scavenger metal layer to maximise drift. Ni and O interstitials are generally found to be higher in energy than the respective vacancies suggesting that significant recombination of O vacancies and interstitials does not take place as proposed in some models of switching behaviour. (C) 2015 AIP Publishing LLC.
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