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Title
Ge-on-Si photodiode with black silicon boosted responsivity
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 5, Pages 051103
Publisher
AIP Publishing
Online
2015-08-04
DOI
10.1063/1.4927836
References
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Related references
Note: Only part of the references are listed.- Franz-Keldysh effect in GeSn pin photodetectors
- (2014) M. Oehme et al. APPLIED PHYSICS LETTERS
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- An 18.2%-efficient black-silicon solar cell achieved through control of carrier recombination in nanostructures
- (2012) Jihun Oh et al. Nature Nanotechnology
- Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range
- (2012) M. Schmid et al. THIN SOLID FILMS
- Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current
- (2011) Christopher T. DeRose et al. OPTICS EXPRESS
- Ge-Photodetectors for Si-Based Optoelectronic Integration
- (2011) Jian Wang et al. SENSORS
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- (2011) Vito Sorianello et al. Optical Materials Express
- Germanium on Silicon Photodetectors with Broad Spectral Range
- (2010) M. Oehme et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- High-performance Ge-on-Si photodetectors
- (2010) Jurgen Michel et al. Nature Photonics
- 40 Gb/s surface-illuminated Ge-on-Si photodetectors
- (2009) Johann Osmond et al. APPLIED PHYSICS LETTERS
- Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz
- (2009) S. Klinger et al. IEEE PHOTONICS TECHNOLOGY LETTERS
- 42 GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguide
- (2009) Laurent Vivien et al. OPTICS EXPRESS
- High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding
- (2008) Long Chen et al. OPTICS EXPRESS
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