Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4928534
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Funding
- 973 projects [2013CBA01600, 2013CB932900]
- NSFC [61306021, 61204050, 61229401]
- NSFJS [BK20130579, KB2011011, BK20130055]
- Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects [61511140098]
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The reduction of contact resistance in ferroelectric organic field-effect transistors (Fe-OFETs) by buffering the interfacial polarization fluctuation was reported. An ultrathin poly(methyl methacrylate) layer was inserted between the ferroelectric polymer and organic semiconductor layers. The contact resistance was significantly reduced to 55 k Omega cm. By contrast, Fe-OFETs without buffering exhibited a significantly larger contact resistance of 260 k Omega cm. Results showed that such an enhanced charge injection was attributed to the buffering effect at the semiconductor/ferroelectric interface, which narrowed the trap distribution of the organic semiconductor in the contact region. The presented work provided an efficient method of lowering the contact resistance in Fe-OFETs, which is beneficial for the further development of Fe-OFETs. (C) 2015 AIP Publishing LLC.
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