4.8 Article

Silicon Ring Strain Creates High-Conductance Pathways in Single-Molecule Circuits

Journal

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 135, Issue 49, Pages 18331-18334

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/ja410656a

Keywords

-

Funding

  1. Center for Re-Defining Photovoltaic Efficiency Through Molecular-Scale Control, as Energy Frontier Research Center
  2. U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Science [DE-SC0001085]
  3. NSF [11-44155, CHE-11-52949]
  4. Semiconductor Research Corporation
  5. New York CAIST program
  6. Division Of Chemistry
  7. Direct For Mathematical & Physical Scien [1152949] Funding Source: National Science Foundation

Ask authors/readers for more resources

Here we demonstrate for the first time that strained silanes couple directly to gold electrodes in break-junction conductance measurements. We find that strained silicon molecular wires terminated by alkyl sulfide aurophiles behave effectively as single-molecule parallel circuits with competing sulfur-to-sulfur (low G) and sulfur-to-silacycle (high G) pathways. We can switch off the high conducting sulfur-to-silacycle pathway by altering the environment of the electrode surface to disable the Au-silacycle coupling. Additionally, we can switch between conductive pathways in a single molecular junction by modulating the tip-substrate electrode distance. This study provides a new molecular design to control electronics in silicon-based single molecule wires.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available