Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4926991
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Funding
- NSFC [61204050, 11274155]
- National Basic Research 973 Program [2014CB921101, 2013CB932900, 2013CB632101]
- Scientific and Technological Support Programme in Jiangsu province [BE2014147-2]
- Jiangsu Shuangchuang Team's Program
- French ANR Project SOLARIUM [ANR-14-CE05-0005]
- Agence Nationale de la Recherche (ANR) [ANR-14-CE05-0005] Funding Source: Agence Nationale de la Recherche (ANR)
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Combining advanced materials and junction design in nanowire-based thin film solar cells requires a different thinking of the optimization strategy, which is critical to fulfill the potential of nanostructured photovoltaics. Based on a comprehensive knowledge of the junction materials involved in the multilayer stack, we demonstrate here, in both experimental and theoretical manners, the potential of hydrogenated amorphous Si (a-Si:H) thin film solar cells in a radial junction (RJ) configuration. Resting upon a solid experimental basis, we also assess a more advanced tandem RJ structure with radially stacking a-Si: H/nanocrystalline Si (nc-Si:H) PIN junctions, and show that a balanced photo-current generation with a short circuit current density of J(sc) = 14.2 mA/cm(2) can be achieved in a tandem RJ cell, while reducing the expensive nc-Si: H absorber thickness from 1-3 mu m (in planar tandem cells) to only 120 nm. These results provide a clearly charted route towards a high performance Si thin film photovoltaics. (C) 2015 AIP Publishing LLC.
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