Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 133, Issue 22, Pages 8455-8457Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ja201334s
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Funding
- Department of Energy [DE-SC0001085]
- New York State Office of Science, Technology, and Academic Research (NYSTAR)
- New York State Energy Research Development Authority (NYSERDA)
- NSF GRFP
- U.S. Department of Energy (DOE) [DE-SC0001085] Funding Source: U.S. Department of Energy (DOE)
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Understanding the electrical properties of semiconducting quantum dot devices have been limited due to the variability of their size/composition and the chemistry of ligand/electrode binding. Furthermore, to probe their electrical conduction properties and its dependence on ligand/electrode binding, measurements must be carried out at the single dot/cluster level. Herein we report scanning tunneling microscope based break junction measurements of cobalt chalcogenide clusters with Te, Se and S to probe the conductance properties. Our measured conductance trends show that the Co-Te based clusters have the highest conductance while the Co-S clusters the lowest. These trends are in very good agreement with cyclic voltammetry measurements of the first oxidation potentials and with density functional theory calculations of their HOMO-LUMO gaps.
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