Origins of Hole Doping and Relevant Optoelectronic Properties of Wide Gap p-Type Semiconductor, LaCuOSe

Title
Origins of Hole Doping and Relevant Optoelectronic Properties of Wide Gap p-Type Semiconductor, LaCuOSe
Authors
Keywords
-
Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 132, Issue 42, Pages 15060-15067
Publisher
American Chemical Society (ACS)
Online
2010-10-07
DOI
10.1021/ja107042r

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