Journal
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Volume 94, Issue 11, Pages 4078-4083Publisher
WILEY
DOI: 10.1111/j.1551-2916.2011.04692.x
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Funding
- National Basic Research Program of China (973 Program) [2009CB939704, 2009CB939705]
- Nature Science Foundation of Hubei Province, China [2007ABA217]
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This article introduces a novel and valid process for preparing a high concentration substitutional N-doped TiO2 photocatalytic film, i.e. firstly the titanium substrate was plasma nitrided and then the N-doped TiO2 was synthesized on the surface of nitrided titanium by using micro-arc oxidation. Compared with the traditional thermal annealing, the present process provides a possibility to increase the nitrogen doping concentration up to 3.21 at.% and x to 0.11 in TiO2-xNx, which exhibits a significant red-shift in the band-gap transition, narrow band gap to 2.6 eV, higher photo-generated charge carrier density and improved photocatalytic property.
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