Journal
APPLIED PHYSICS LETTERS
Volume 107, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4932123
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Funding
- ONR [N00014-11-1-0665]
- NSF MRSEC program [DMR-1120296]
- National Science Foundation [ECCS-0335765]
- Army Research Office
- National Science Foundation
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We report the growth of (001)-oriented VO2 films as thin as 1.5 nm with abrupt and reproducible metal-insulator transitions (MIT) without a capping layer. Limitations to the growth of thinner films with sharp MITs are discussed, including the Volmer-Weber type growth mode due to the high energy of the (001) VO2 surface. Another key limitation is interdiffusion with the (001) TiO2 substrate, which we quantify using low angle annular dark field scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy. We find that controlling island coalescence on the (001) surface and minimization of cation interdiffusion by using a low growth temperature followed by a brief anneal at higher temperature are crucial for realizing ultrathin VO2 films with abrupt MIT behavior. (C) 2015 AIP Publishing LLC.
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