Rate of Generation of Nonequilibrium Charge Carriers by a Focused X-Ray Beam

A model of the interaction between an X-ray beam and a semiconductor sample is proposed for the X-ray-beam induced current method. The spatial distribution of the generation rate of nonequilibrium charge carriers (also called the generation function) is obtained using this model. It is shown that the generation function is proportional to the X-ray probe intensity for a rather broad X-ray beam. The results of calculating contrast profiles of the induced current for the described generation function are compared with those for the generation function proportional to the X-ray probe intensity and also with experimental profiles.