Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4921349
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Funding
- National Research Foundation of Korea (NRF) [2011-0028769]
- National Research Foundation of Korea [2011-0028769] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This paper reports the bipolar resistive switching characteristics of TaNx-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from -0.82V to -0.62 V, whereas the set voltage ranges from 1.01V to 1.30V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (> 10(5) s) and pulse-switching endurance (> 10(6) cycles) properties. These results indicate that TaNx-based ReRAM devices have a potential for future nonvolatile memory devices. (C) 2015 AIP Publishing LLC.
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