Nitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel

Published 2015 View Full Article

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Title
Nitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel
Authors
Keywords
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Journal
Applied Physics Express
Volume 8, Issue 2, Pages 024302
Publisher
Japan Society of Applied Physics
Online
2015-01-29
DOI
10.7567/apex.8.024302

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