4.6 Article

Combinatorial study of WInZnO films deposited by rf magnetron co-sputtering

Journal

JOURNAL OF SOLID STATE CHEMISTRY
Volume 184, Issue 9, Pages 2462-2465

Publisher

ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jssc.2011.07.024

Keywords

Tungsten indium zinc oxide (WInZnO) films; Indium zinc oxide (IZO) films; Tungsten trioxide (WO3); Combinatorial rf magnetron co-sputtering; Compositionally spread films; Active channel layer

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The compositional dependence of co-sputtered tungsten indium zinc oxide (WInZnO) film properties was first investigated by means of a combinatorial technique. Indium zinc oxide (IZO) and WO3 targets were used with different target power. W composition ratio [W/(In+Zn+W)] was varied between 3 and 30 at% and film thickness was reduced as the sample position moved toward WO3 target. Furthermore, the optical bandgap energy increased gradually, which might be affected by the reduction in film thickness. All the WInZnO films showed an amorphous phase regardless of the W/(In+Zn+W) ratio. As the W/(In+Zn+W) ratio in WInZnO films increased, the carrier concentration was restricted, causing the increase in electrical resistivity. W cations worked as oxygen binders in determining the electronic properties, resulting in suppressing the formation of oxygen vacancies. Consequentially, W metal cations were effectively incorporated into the WInZnO films as a suppressor against the oxygen vacancies and the carrier generation by employing the combinatorial technique. (C) 2011 Elsevier Inc. All rights reserved.

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