Journal
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
Volume 54, Issue 3, Pages 276-281Publisher
SPRINGER
DOI: 10.1007/s10971-010-2182-0
Keywords
Transparent conductive oxide (TCO); Tungsten-doped tin oxide; Thin films; Sol-gel technique
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Funding
- National Natural Science Foundation of China [60671041]
- Research Fund for the Doctoral Program of Higher Education [20070246032]
- Shanghai Leading Academic Discipline Project [B113]
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Transparent conductive tungsten-doped tin oxide (SnO2:W) thin films were synthesized on quartz glass substrates by sol-gel dip-coating method. It was found that the films were highly transparent and the average optical transmission was about 90% in the visible and near infrared region from 400 to 2,500 nm. The optical band gap is about 4.1 eV. The lowest resistivity of 5.8 x 10(-3) ohm cm was obtained, with the carrier mobility of 14.2 cm(2) V-1 s(-1) and carrier concentration of 7.6 x 10(19) cm(-3) in 3 at.% W-doping films annealed at 850 A degrees C in air. The structural properties, surface morphology and chemical states for the films were investigated.
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