Atomistic study of the structural and electronic properties of a-Si:H/c-Si interfaces

Title
Atomistic study of the structural and electronic properties of a-Si:H/c-Si interfaces
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 26, Issue 9, Pages 095001
Publisher
IOP Publishing
Online
2014-02-13
DOI
10.1088/0953-8984/26/9/095001

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