Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 24, Issue 36, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/0953-8984/24/36/365801
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Funding
- Czech Science Foundation [P204/11/1228]
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Results of first-principles calculations of the Fe/GaAs/Ag(001) epitaxial tunnel junctions reveal that hybridization of interface resonances formed at both interfaces can enhance the tunnelling anisotropic magnetoresistance (TAMR) of the systems. This mechanism is manifested by a non-monotonic dependence of the TAMR effect on the thickness of the tunnel barrier, with a maximum for intermediate thicknesses. A detailed scan of k(parallel to)-resolved transmissions over the two-dimensional Brillouin zone proves an interplay between a few hybridization-induced hot spots and a contribution to the tunnelling from the vicinity of the (Gamma) over bar point. This interpretation is supported by calculated properties of a simple tight-binding model of the junction, which reproduce qualitatively most of the features of the first-principles theory.
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