Dephasing effect on transport of a graphene p–n junction in a quantum Hall regime

Transport properties of monolayer and bilayer graphene p–n junctions with charge puddles in the quantum Hall regime

(2010) Shu-guang Cheng   JOURNAL OF PHYSICS-CONDENSED MATTER

Probing charging and localization in the quantum Hall regime by graphenep–n–pjunctions

(2010) Jairo Velasco et al.   PHYSICAL REVIEW B

Effect of disorder on longitudinal resistance of a graphenep−njunction in the quantum Hall regime

(2010) Jiang-chai Chen et al.   PHYSICAL REVIEW B

Four-Terminal Magneto-Transport in Graphene p-n Junctions Created by Spatially Selective Doping

(2009) Timm Lohmann et al.   NANO LETTERS

Electronic transport properties of a tilted graphenep−njunction

(2009) Tony Low et al.   PHYSICAL REVIEW B

Quantum Hall resistances of a multiterminal top-gated graphene device

(2009) Dong-Keun Ki et al.   PHYSICAL REVIEW B

Ballistic-Ohmic quantum Hall plateau transition in a graphenep−njunction

(2009) Tony Low   PHYSICAL REVIEW B

Topological Insulator: A New Quantized Spin Hall Resistance Robust to Dephasing

(2009) Hua Jiang et al.   PHYSICAL REVIEW LETTERS

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS

Disorder effects in the quantum Hall effect of graphenep−njunctions

(2008) Jian Li et al.   PHYSICAL REVIEW B

Influence of dephasing on the quantum Hall effect and the spin Hall effect

(2008) Yanxia Xing et al.   PHYSICAL REVIEW B

Inelastic scattering in a monolayer graphene sheet: A weak-localization study

(2008) Dong-Keun Ki et al.   PHYSICAL REVIEW B

Disorder-Induced Enhancement of Transport through Graphenep−nJunctions

(2008) Wen Long et al.   PHYSICAL REVIEW LETTERS

Colloquium: Andreev reflection and Klein tunneling in graphene

(2008) C. W. J. Beenakker   REVIEWS OF MODERN PHYSICS