Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA, >95%)

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Title
Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA, >95%)
Authors
Keywords
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Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 47, Issue 11, Pages 115102
Publisher
IOP Publishing
Online
2014-02-26
DOI
10.1088/0022-3727/47/11/115102

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