Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 46, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/46/5/055107
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Funding
- National Science Foundation [DMR-0803276]
- Norwegian Research Centre for Solar Cell Technology, a Centre for Environment-friendly Energy Research [193829]
- Norwegian Research Council
- AFOSR [FA9550-10-1-0079]
- AFRL [HC1047-05-D-4005]
- Norwegian Research Council through the NANOMAT
- Norwegian Research Council through FRINATEK program
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0803276] Funding Source: National Science Foundation
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [823805] Funding Source: National Science Foundation
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We used depth-resolved cathodoluminescence spectroscopy (DRCLS), photoluminescence (PL) spectroscopy and temperature-dependent Hall-effect (TDHE) measurements to describe the strong dependence of H passivation and doping in H-implanted ZnO on thermal treatment. Increasing H implantation dose increases passivation of Zn and oxygen vacancy-related defects, while reducing deep level emissions. Over annealing temperatures of 100-400 degrees C at different times, 1 h annealing at 200 degrees C yielded the lowest DRCLS deep level emissions, highest TDHE carrier mobility, and highest near band-edge PL emission. These results describe the systematics of dopant implantation and thermal activation on H incorporation in ZnO and their effects on its electrical properties.
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