Characterization of transparent conducting p-type nickel oxide films grown by liquid phase deposition on glass

Transparent conducting nickel oxide (NiO) films were prepared by liquid phase deposition on glass. Saturated NiF2 and boric acid solutions were used as precursors. There was a growth delay time of 5 h and the growth rate was 34.3 nm per hour in the growth region. After annealing at 400 degrees C in air, the resistivity was improved from 4.85 x 10(3) Omega cm to 7.5 x 10(-1) Omega cm, and the transmittance decreased from 91.85% to 66.49% at a wavelength of 550 nm, respectively.